Автор: Brent Keeth, R.Jacob Baker, Brian Johnson, Feng Lin.
Название: DRAM Circuit Design. Fundamental and High-Speed Topics
Издательство: Wiley-IEEE Press
Кол-во страниц: 440
Для сайта: Bukvy.net
A modern, comprehensive introduction to DRAM for students and practicing chip designers.
Dynamic Random Access Memory (DRAM) technology has been one of the greatestdriving forces in the advancement of solid-state technology. With its ability to produce high product volumes and low pricing, it forces solid-state memory manufacturers to work aggressively to cut costs while maintaining, if not increasing, their market share. As a result, the state of the art continues to advance owing to the tremendous pressure to get more memory chips from each silicon wafer, primarily through process scaling and clever design.